Wolfspeed’s Gen 5 SiC MOSFETs Cut Resistance, Boost EV Efficiency
Event summary
- Wolfspeed launched its fifth-generation silicon carbide (SiC) MOSFETs, achieving a 27% reduction in specific on-resistance (RSP) over competing 1200V solutions.
- The Gen 5 technology enables more compact traction inverters and improves mileage per charge for EVs, addressing key barriers to adoption.
- Samples for the 1200V QEM50120-25D10 and 750V QEM50075-025D10 MOSFETs are available for select customers, with additional products launching through 2027.
- The technology is manufactured in Wolfspeed’s 200mm fabrication facility in Mohawk Valley, NY, ensuring low-risk production scaling.
The big picture
Wolfspeed’s Gen 5 SiC MOSFETs address critical EV challenges—cost, range, and charging—by enabling smaller, more efficient power systems. The launch underscores the semiconductor industry’s push toward higher-performance SiC solutions, as automakers and industrial players demand components that reduce system-level losses. With production already scaled in New York, Wolfspeed is positioning itself as a key enabler of next-generation electrification.
What we're watching
- Adoption Pace
- How quickly automotive OEMs integrate Gen 5 MOSFETs into EV designs, given compressed development timelines.
- Competitive Response
- Whether rivals like Infineon or STMicroelectronics can match Wolfspeed’s RSP improvements in SiC MOSFETs.
- Industrial Expansion
- The pace at which Gen 5 technology extends beyond automotive into industrial power supplies and charging infrastructure.
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