Samsung Ships First HBM4E Samples, Boosting AI Memory Performance
Event summary
- Samsung has begun shipping samples of its 12-layer HBM4E memory, the industry's first, to major global customers.
- HBM4E delivers a stable pin speed of 14 Gbps, scalable up to 16 Gbps, a 20% increase over HBM4.
- The memory offers up to 3.6 TB/s bandwidth per stack and a 48GB capacity, with plans for 32GB and 64GB configurations.
- Samsung leverages its 6th-generation 10nm-class DRAM process and 4nm logic base die for enhanced performance and efficiency.
- Mass production of HBM4E is planned to align with customer schedules following sample shipments.
The big picture
Samsung's HBM4E launch underscores the accelerating demand for high-performance memory in AI computing. The company's ability to scale pin speeds and bandwidth positions it as a key supplier in the rapidly evolving AI infrastructure market. With mass production planned, Samsung aims to solidify its role in powering next-generation AI systems.
What we're watching
- Performance Scaling
- How the 20% performance increase in HBM4E will impact adoption in AI and hyperscale data centers.
- Market Leadership
- Whether Samsung can sustain its lead in next-generation HBM memory amid competitive pressures.
- Production Timing
- The pace at which Samsung transitions from sampling to mass production of HBM4E.
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