ROHM Launches 4th-Gen 650V IGBTs with Industry-Leading Efficiency…

Event summary

ROHM Semiconductor introduced 4th-generation 650V IGBTs on August 25, 2026, targeting automotive and industrial applications.
The new IGBTs achieve class-leading low conduction loss (VCE(sat) = 1.55V) and high short-circuit tolerance.
The lineup includes 12 TO-247N packaged products and 10 bare wafer products, with additional TO-247-4L packaged products in development.
Products are available through distributors like DigiKey and Farnell, with design models accessible on ROHM’s website.

The big picture

As electric vehicles and industrial equipment demand higher efficiency and reliability, ROHM’s 4th-gen IGBTs position the company to capture market share in auxiliary automotive systems and industrial inverters. The shift toward silicon IGBTs in lower-power applications contrasts with the broader industry trend of adopting SiC for high-power applications, highlighting ROHM’s strategic focus on niche efficiency gains.

What we're watching

Market Adoption: The pace at which automotive and industrial equipment manufacturers integrate these IGBTs into their designs.
Competitive Response: Whether competitors will match or surpass ROHM’s efficiency and reliability benchmarks.
Product Expansion: How quickly ROHM can scale its lineup with compact, surface-mount IGBT products.