ROHM Semiconductor Boosts Terahertz Output Fourfold with Second-Generation Device

  • ROHM Semiconductor launched its second-generation terahertz wave oscillation device on August 4, 2026, delivering four times the output power of its predecessor while maintaining a compact 0.5 × 0.5mm chip size.
  • The new device achieves a maximum output power of 40µW, enhancing detectability for sensing and imaging applications.
  • The RTD-EVK-G2 evaluation kit, including the second-generation device, will begin sales in August 2026, targeting non-destructive testing, medical imaging, and material identification markets.

ROHM Semiconductor's second-generation terahertz device addresses key barriers in the adoption of THz technology, including high equipment costs and large system sizes. By significantly boosting output power while maintaining compactness, ROHM is positioning itself as a leader in enabling real-world applications across industries like healthcare, non-destructive testing, and material science.

Market Adoption
The pace at which the second-generation device will be adopted by research institutions and commercial entities, given its improved signal quality and compact size.
Competitive Positioning
Whether ROHM can sustain its lead in terahertz technology against competitors developing alternative THz generation methods.
Application Expansion
How the increased output power will accelerate development of high-signal-quality applications, such as advanced medical imaging and high-resolution radar sensing.