ROHM Introduces Top-Side Cooling Package for SiC MOSFETs, Targeting EV and Industrial Applications
Event summary
- ROHM Semiconductor launched the TSC3PAK package for SiC MOSFETs, featuring top-side heat dissipation and automated mounting.
- The new package matches the heat dissipation of conventional through-hole packages while enabling surface-mount compatibility.
- Mass production of the TSC3PAK package began in June 2026, targeting applications in onboard chargers, electric compressors, PV inverters, and server power supplies.
- The package incorporates ROHM’s proprietary groove structure, securing a 6.66mm creepage distance for high-voltage applications.
- ROHM’s 4th Generation SiC MOSFETs integrated into the package reduce switching losses, improving efficiency and lowering power consumption.
The big picture
ROHM’s new TSC3PAK package addresses the growing demand for high-efficiency power conversion in electric vehicles and industrial equipment. As SiC devices expand beyond main inverters into onboard chargers and electric compressors, ROHM’s innovation positions it to capture market share in high-growth segments. The shift from through-hole to surface-mount technology also aligns with broader industry trends toward automation and miniaturization in power electronics.
What we're watching
- Adoption Pace
- How quickly automotive and industrial equipment manufacturers will integrate the TSC3PAK package into their designs.
- Competitive Response
- Whether competitors will introduce similar surface-mount SiC MOSFET packages to challenge ROHM’s market position.
- Performance Validation
- The extent to which the TSC3PAK package’s heat dissipation and efficiency claims will be validated in real-world applications.
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