ROHM’s SiC MOSFET Chosen for AI Server Power Systems as HVDC Adoption Accelerates
Event summary
- ROHM’s 750 V SiC MOSFET (SCT4013DLL) adopted in BBU for AI server power supplies, supporting ±400 V power architecture.
- SiC MOSFET offers high-temperature tolerance (Tj max 175°C), critical for high-power, high-voltage environments.
- HVDC architectures in AI servers drive demand for SiC power devices with high voltage capability and low loss.
- ROHM to strengthen development and supply of SiC, GaN, and silicon power devices for data center markets.
The big picture
The adoption of ROHM’s SiC MOSFET in AI server power systems underscores the industry’s shift toward HVDC architectures to manage rising power demands from generative AI workloads. As data centers scale up, the need for high-voltage, low-loss power solutions is becoming critical, positioning SiC and GaN power devices as key enablers of next-generation power efficiency. ROHM’s integrated production system and EcoSiC™ brand further solidify its role in this evolving market.
What we're watching
- Technology Adoption
- How quickly AI server manufacturers will transition to 800 VDC architectures, necessitating higher-voltage SiC MOSFETs.
- Market Expansion
- Whether ROHM can sustain its lead in SiC power devices amid growing competition in the data center power supply market.
- Sustainability Impact
- The pace at which HVDC architectures and SiC power devices contribute to reducing data center power consumption and carbon footprint.
Related topics