ROHM Semiconductor Cuts SiC MOSFET On-Resistance by 30% for High-Temperature Applications
Event summary
- ROHM Semiconductor has developed 5th Generation SiC MOSFETs with approximately 30% lower on-resistance at high temperatures (Tj=175°C) compared to its 4th Generation products.
- The new MOSFETs are optimized for high-efficiency power applications, including automotive electric powertrains and AI server power supplies.
- Sample provision of discrete devices and modules incorporating the 5th Generation SiC MOSFETs will begin in July 2026.
- ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026.
The big picture
ROHM Semiconductor's latest development underscores the growing importance of silicon carbide (SiC) technology in high-efficiency power applications. As the demand for extended cruising range in electric vehicles and higher performance in AI servers increases, the need for low-loss inverters and onboard chargers is driving the adoption of SiC devices. ROHM's fully integrated production system and in-house development of core technologies position it as a leading supplier in this rapidly evolving market.
What we're watching
- Market Adoption
- The pace at which the 5th Generation SiC MOSFETs will be adopted in automotive and industrial applications, particularly in high-power systems.
- Competitive Positioning
- Whether ROHM can maintain its leadership in the SiC MOSFET market amid increasing competition and demand for high-efficiency power solutions.
- Technological Integration
- How the structural enhancements and manufacturing process optimizations will impact the broader adoption of SiC technology in various high-power applications.
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