ROHM Launches 4th-Gen 650V IGBTs with Industry-Leading Low-Loss Performance — ROHM Co., Ltd. (ROHM Semiconductor)

Event summary

ROHM introduced 4th-generation 650V IGBTs on August 26, 2026, targeting automotive electric compressors, HV heaters, and industrial inverters.
The new IGBTs achieve class-leading low conduction loss (VCE(sat)=1.55V) and high short-circuit tolerance, complying with AEC-Q101 automotive reliability standards.
The lineup includes 12 TO-247N packaged products and 10 bare wafer products, with additional TO-247-4L packaged products in development.
ROHM redesigned device structure, process, and edge termination to balance low-loss characteristics with short-circuit tolerance, achieving a 7-microsecond withstand time at Tj=25C.

The big picture

As electric vehicles shift to higher voltages, SiC is gaining traction in high-power applications, but 650V IGBTs remain critical for lower-power auxiliary systems and industrial equipment. ROHM's new IGBTs address the growing demand for higher efficiency, smaller designs, and greater reliability in these applications. The strategic move positions ROHM to capture market share in both automotive and industrial sectors, where energy savings and compact designs are increasingly prioritized.

What we're watching

Market Adoption: How quickly automotive and industrial equipment manufacturers will integrate ROHM's 4th-gen IGBTs into their designs, given the demand for energy-efficient and compact solutions.
Competitive Response: Whether competitors will accelerate their own IGBT development to match or surpass ROHM's low-loss and short-circuit tolerance achievements.
Product Expansion: The pace at which ROHM will expand its IGBT lineup, particularly with the development of compact, surface-mount IGBTs in the TO-263L and TSC packages.