Renesas Launches First 650V GaN Device with Dual-Side Cooling for AI Data Centers
Event summary
- Renesas introduced the industry's first 650V GaN device with dual-side cooling in an 8x8mm package for megawatt-scale AI data centers.
- The TP65H020G4PLSGBD device features 20 milliohms on-resistance and is 57% smaller than existing 10x15mm TOLT packages.
- Sampling begins immediately, with mass production planned for mid-2027.
- Renesas validated the device in a 6kW, 800V-to-48V LLC DC transformer reference design, achieving 2.6 kW/in³ power density.
The big picture
Renesas' new GaN device addresses critical space and thermal constraints in megawatt-scale AI data centers, enabling higher power densities in compact form factors. This launch aligns with the industry's shift toward 800V architectures, which are essential for supporting the growing computational demands of AI workloads. The device's compatibility with existing silicon gate drivers simplifies adoption, potentially accelerating its integration into next-generation data center designs.
What we're watching
- Adoption Pace
- How quickly major AI data center OEMs and ODMs will integrate the new GaN device into their designs.
- Competitive Response
- Whether competitors will introduce similar dual-side-cooled GaN devices to challenge Renesas' lead.
- Performance Validation
- The extent to which the device's promised efficiency and power density gains will be validated in real-world deployments.
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