Renesas Launches First Bidirectional 650V GaN Switch for Solar and AI Applications — Renesas Electronics Corporation

Event summary

Renesas introduced the industry’s first bidirectional 650V-class GaN switch using depletion-mode (d-mode) technology.
The TP65B110HRU switch targets solar microinverters, AI data centers, and onboard EV chargers.
The new switch simplifies power converter designs by replacing conventional back-to-back FET switches with a single low-loss, fast-switching device.
Renesas demonstrated higher than 97.5% power efficiency in a single-stage solar microinverter implementation.
The TP65B110HRU is available in quantity today, with an evaluation kit also available for testing.

The big picture

Renesas' introduction of the first bidirectional 650V-class GaN switch marks a significant advancement in power conversion technology. This innovation addresses the limitations of unidirectional silicon or silicon carbide (SiC) switches, enabling higher efficiency and simpler designs in solar microinverters and AI data centers. The shift towards single-stage converters with fewer components aligns with broader industry trends towards more efficient and compact power solutions.

What we're watching

Adoption Pace: How quickly will solar microinverters and AI data centers integrate the new GaN switch?
Competitive Response: Whether competitors will accelerate their own GaN switch developments in response.
Market Expansion: The pace at which Renesas can expand the use cases for bidirectional GaN switches beyond solar and AI applications.