U.S. Army Awards Navitas $10 kV SiC Semiconductor Development Contract
Event summary
- Navitas Semiconductor awarded ALATTIS program to develop 10 kV SiC power semiconductors for defense applications.
- Project sponsored by Army Research Laboratory under DEVCOM, aiming to establish domestic manufacturing for ultra-high-voltage SiC IGBTs.
- Navitas' GeneSiC™ technology and trench-assisted planar (TAP) architecture central to the development.
- Program supported by JETX to advance high-power electronics for critical defense and infrastructure systems.
The big picture
The ALATTIS program underscores the U.S. military's push for domestic production of critical semiconductor technologies, particularly in high-voltage applications. Navitas' selection highlights the strategic importance of its GeneSiC™ portfolio and trench-assisted planar architecture in defense electronics. This contract could further solidify Navitas' position as a leader in ultra-high-voltage silicon carbide power semiconductors, with potential spillover effects into commercial infrastructure markets.
What we're watching
- Execution Risk
- Whether Navitas can deliver on the ALATTIS program's ambitious timeline and technical requirements.
- Market Expansion
- How this defense contract could position Navitas for similar opportunities in civilian infrastructure.
- Technological Leadership
- The pace at which Navitas advances its 10 kV SiC IGBT technology relative to competitors.
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