Navitas Licenses Silicon Carbide Tech to Magnachip for High-Voltage Power Markets

  • Navitas has licensed its GeneSiC™ Gen 4 and Gen 5 silicon carbide (SiC) technologies to Magnachip, covering voltages from 1200V to 3300V+.
  • Magnachip will integrate Navitas’ Trench-Assisted Planar™ technology into its South Korean fab for high-voltage power applications.
  • The partnership targets energy infrastructure, storage, industrial electrification, and automotive markets in Korea.
  • Additional collaboration areas beyond SiC are expected to be announced later.

This deal positions Magnachip to compete in high-voltage SiC markets, where efficiency and reliability are critical. The partnership reflects a broader industry shift toward wide bandgap semiconductors for power-intensive applications, with Navitas leveraging its technology ecosystem to scale adoption.

Technology Integration
How quickly Magnachip can port and qualify Navitas’ SiC technology in its Korean fab will determine market entry speed.
Market Expansion
Whether this partnership accelerates SiC adoption in Korea’s high-power systems beyond initial target applications.
Strategic Alignment
The potential for broader collaboration between the two companies to extend beyond silicon carbide into other power semiconductor areas.