Kioxia and Sandisk Unveil Highest-Density QLC NAND with 60% Bit Density Boost
Event summary
- Kioxia and Sandisk introduced a next-gen Quad-Level-Cell (QLC) 3D flash memory technology with up to 60% higher bit density than their 8th-generation, exceeding 37 Gb/mm².
- The new technology achieves a 4.8 Gb/s NAND interface, the first for QLC 3D flash memory, leveraging CMOS directly Bonded to Array (CBA) architecture.
- Power efficiency improvements address cooling and power challenges in AI and cloud infrastructure.
- Kioxia and Sandisk aim to commercialize this 10th-generation technology, targeting AI-driven data storage needs.
The big picture
Kioxia and Sandisk’s breakthrough in QLC NAND technology comes as AI workloads drive unprecedented demand for high-capacity, energy-efficient storage. The 60% bit density increase positions them to capture market share in data centers and cloud infrastructure, where power efficiency is critical. This development underscores the arms race in semiconductor innovation to support next-generation computing.
What we're watching
- Market Adoption
- How quickly hyperscale data centers and AI infrastructure providers integrate this technology into their operations.
- Competitive Response
- Whether rivals like Micron or SK Hynix accelerate their own QLC NAND advancements to match Kioxia and Sandisk’s density and efficiency gains.
- Commercialization Timeline
- The pace at which Kioxia and Sandisk transition from prototype to mass production of this 10th-generation flash memory.
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