Kioxia Starts Sampling 9th-Gen BiCS FLASH™ TLC Devices with 33% Speed Boost
Event summary
- Kioxia has begun sample shipments of its 1Tb Triple-Level Cell (TLC) memory devices using 9th-generation BiCS FLASH™ technology.
- The new devices feature a 230-layer stacking process and deliver a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-gen devices.
- Kioxia is pursuing a dual-axis strategy with both 9th-generation (high performance at lower cost) and 10th-generation (massive capacity) product lines.
- The technology leverages CMOS directly Bonded to Array (CBA) and On-Pitch Select Gate Drain (OPS) technologies.
The big picture
Kioxia's new 9th-generation BiCS FLASH™ devices highlight its commitment to advancing storage solutions for AI infrastructure. The dual-axis strategy positions the company to cater to both performance-sensitive and capacity-driven markets, reinforcing its leadership in memory solutions. This move comes as demand for high-performance storage continues to grow, particularly in data centers and generative AI systems.
What we're watching
- Performance Scaling
- How the 33% speed improvement in 9th-gen devices will impact adoption in AI-enabled PCs and smartphones.
- Dual-Axis Strategy
- Whether Kioxia can sustain its dual-axis strategy of balancing high performance with massive capacity.
- Market Differentiation
- The pace at which competitors will respond to Kioxia's advancements in 3D flash memory technology.
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