Kioxia Launches 10th-Gen BiCS FLASH™ with 33% Speed Boost for AI Storage
Event summary
- Kioxia began sample shipments of its 1Tb TLC memory devices using 10th-generation BiCS FLASH™ technology.
- The new tech achieves a 4.8 Gb/s NAND interface speed, a 33% improvement over the 8th generation.
- Bit density increased by 59% via 332-layer stacking and improved lateral density.
- Write and read power efficiencies improved by 18% and 30%, respectively.
The big picture
Kioxia’s 10th-generation BiCS FLASH™ technology targets the surging demand for high-performance, low-power storage in AI infrastructure. The company’s dual-axis strategy—balancing cost-effective 9th-gen solutions with high-capacity 10th-gen advancements—positions it to compete in a market increasingly dominated by generative AI workloads.
What we're watching
- Performance Scaling
- How the 33% speed improvement will impact adoption in AI-driven data centers.
- Power Efficiency
- Whether the 18%-30% power savings can drive cost reductions for enterprise storage.
- Market Differentiation
- The pace at which Kioxia’s dual-axis strategy will solidify its position against competitors like Samsung and Micron.
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