Kioxia Launches QLC UFS 4.1 Devices for High-Capacity Mobile Storage
Event summary
- Kioxia has begun sampling QLC UFS 4.1 embedded flash memory devices with 4-bit-per-cell technology.
- The new devices offer 25% faster sequential write speeds, 90% faster random read speeds, and 95% faster random write speeds compared to UFS 4.0.
- Available in 512GB and 1TB capacities, the devices feature Kioxia’s 8th generation BiCS FLASH 3D flash memory with CMOS directly Bonded to Array (CBA) technology.
- The devices are designed for read-intensive applications and high-capacity storage needs in smartphones, tablets, PCs, networking, AR/VR, IoT, and AI-enabled devices.
The big picture
Kioxia’s introduction of QLC UFS 4.1 devices marks a significant advancement in embedded flash memory technology, offering higher storage capacities and improved performance. This move aligns with the broader industry trend towards higher-density storage solutions for mobile and emerging device categories. The strategic shift towards QLC technology positions Kioxia to capture market share in high-capacity storage applications.
What we're watching
- Performance Scaling
- How Kioxia’s QLC UFS 4.1 devices will perform in real-world applications, particularly in read-intensive and high-capacity storage needs.
- Market Adoption
- The pace at which smartphones, tablets, and emerging product categories like AR/VR and AI-enabled devices will adopt QLC UFS 4.1 technology.
- Competitive Dynamics
- Whether Kioxia can maintain its competitive edge in the flash memory market against other major players.
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