KIOXIA Launches QLC UFS 4.1 Devices for High-Capacity Mobile Storage — KIOXIA America, Inc.

Event summary

KIOXIA America, Inc. began sampling QLC UFS 4.1 embedded flash memory devices on January 27, 2026.
The new devices feature 4-bit-per-cell QLC technology and achieve significant performance improvements over previous generations.
Available in 512GB and 1TB capacities, the devices are designed for read-intensive applications and high-capacity storage needs.
Key features include sequential write speed increases of 25%, random read speed increases of 90%, and random write speed increases of 95%.
The devices incorporate KIOXIA’s 8th generation BiCS FLASH 3D flash memory technology with CBA (CMOS directly Bonded to Array) technology.

The big picture

KIOXIA’s introduction of QLC UFS 4.1 devices marks a significant step in the evolution of high-capacity, high-performance storage solutions. The advancements in controller technology and error correction enable QLC technology to achieve competitive performance, addressing the growing demand for higher storage capacities in mobile and connected devices. This move positions KIOXIA as a key player in the semiconductor industry, particularly in the flash memory segment.

What we're watching

Market Adoption: How quickly will the new QLC UFS 4.1 devices be adopted in smartphones, tablets, and emerging product categories like AR/VR and AI-enabled devices?
Performance Sustainability: Whether KIOXIA can sustain the performance improvements in real-world applications and maintain competitive advantages over other flash memory technologies.
Technological Advancements: The pace at which KIOXIA will continue to innovate in flash memory technology, particularly with its BiCS FLASH 3D technology and CBA architecture.