Diodes Incorporated Launches Ultra-Low RDS(ON) MOSFETs for Automotive Efficiency — Diodes Incorporated

Event summary

Diodes Incorporated introduced a new line of PowerDI8080-5 automotive-compliant N-channel MOSFETs, including an industry-leading 100V MOSFET with ultra-low RDS(ON).
The new MOSFETs are designed to minimize conduction losses and reduce heat generation in 48V automotive systems.
Applications include BLDC motors, DC-DC conversion systems, battery disconnect switches, and on-board chargers in BEVs, HEVs, and ICE platforms.
The PowerDI8080-5 package offers a 64mm² PCB footprint, 40% smaller than legacy TO-263 packages, with thermal resistance as low as 0.3°C/W.
Pricing for the new MOSFETs ranges from $1.11 to $1.89 in 5,000 piece quantities.

The big picture

Diodes Incorporated's new MOSFET lineup targets the growing demand for high-efficiency power management solutions in electric and hybrid vehicles. As automotive systems transition to higher voltage architectures, the ability to minimize conduction losses and reduce heat generation becomes critical. This launch positions Diodes as a key player in the semiconductor supply chain for next-generation automotive technologies.

What we're watching

Market Adoption: How quickly automotive manufacturers will integrate these MOSFETs into their designs, particularly in BEVs and HEVs.
Competitive Response: Whether competitors will introduce similar low RDS(ON) MOSFETs to capture market share in the 48V automotive systems segment.
Revenue Impact: The pace at which Diodes Incorporated can scale production and sales of these new MOSFETs to drive meaningful revenue growth.