Applied Materials Introduces Systems to Solve 3D Chip Scaling Challenges

  • Applied Materials launched Centris™ Spectral™ SiN ALD and Producer™ Selectra™ Mo Etch systems on June 15, 2026.
  • The systems address precision materials engineering in high-aspect-ratio 3D logic and memory chip structures.
  • Centris Spectral SiN ALD uses microwave plasma technology for uniform silicon nitride deposition.
  • Producer Selectra Mo Etch enables selective molybdenum removal for 3D NAND scaling.
  • The systems are already in use by leading logic and memory chipmakers.

The introduction of these systems comes as the semiconductor industry accelerates its transition to advanced 3D device architectures driven by the demand for AI compute. Applied Materials' innovations aim to overcome critical scaling barriers, enabling continued 3D scaling with better device performance and manufacturability. The systems are part of a broader trend of materials engineering solutions that are essential for the next generation of AI chips.

Adoption Pace
How quickly leading chipmakers will integrate these systems into high-volume manufacturing.
Performance Impact
Whether the new systems will significantly improve device performance and yield in advanced nodes.
Competitive Response
How competitors like Lam Research and Tokyo Electron will react to Applied Materials' technological advancements.