Navitas Launches High-Voltage Isolated SiC MOSFET Package for Direct-Cooled Thermal Management
Event summary
- Navitas introduced the UHV-TO-247-4-ISO package for 1200V, 2300V, and 3300V SiC MOSFETs, featuring integrated high-voltage isolation and direct-cooled thermal management.
- The package eliminates the need for external isolation materials, reducing RTH,J-HS by up to 60% and increasing power dissipation capability by up to 150%.
- The solution is designed for high-voltage applications in energy, grid, and AI data centers, with superior power cycling and thermal cycling lifetime.
- Navitas will showcase the package at PCIM Europe 2026 in Nuremberg, booth #544, Hall 9.
The big picture
Navitas' new package addresses critical thermal and isolation challenges in high-power system design, enabling higher switching speeds and reduced EMI management costs. This innovation positions Navitas to capture a larger share of the growing market for high-voltage power conversion systems in energy, grid, and AI data centers. The direct-cooled thermal management and integrated high-voltage isolation simplify system design and improve overall efficiency, making it a strategic move in the competitive power semiconductor landscape.
What we're watching
- Adoption Pace
- How quickly will high-voltage applications in energy, grid, and AI data centers integrate this package?
- Competitive Response
- Whether competitors will introduce similar isolated through-hole packages for SiC MOSFETs.
- Market Expansion
- The pace at which Navitas can expand its SiC MOSFET product portfolio to capture more market share.
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