Navitas Expands SiC Portfolio with High-Density Packaging for AI Data Centers
Event summary
- Navitas launched two new SiC MOSFET packages: top-side cooled QDPAK and low-profile TO-247-4L, part of its 5th-gen GeneSiC technology.
- The 1200V SiC MOSFETs deliver 35% improvement in RDS,ON × QGD FoM and 25% better QGD/QGS ratio.
- QDPAK package enables top-side cooling, reducing system footprint and improving thermal efficiency.
- TO-247-4L targets AI data center power supplies with a compact vertical profile.
The big picture
Navitas' new SiC packaging solutions address the growing need for compact, high-efficiency power semiconductors in AI data centers and energy infrastructure. The launch reflects the industry's shift toward higher power density and thermal management innovations. As AI workloads intensify, the demand for such specialized semiconductor solutions is expected to rise significantly.
What we're watching
- Market Adoption
- How quickly AI data centers will integrate these high-density SiC packages into their power systems.
- Competitive Response
- Whether established SiC competitors will match Navitas' packaging innovations.
- Scaling Challenges
- The pace at which Navitas can scale production to meet demand from high-power applications.
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